@article{Trifonova:2023tle,
author = {Trifonova, E. and Caselle, M. and Ehrler, F. and Elsenhans, A. F. and Iacobucci, G. and Kopmann, A. and Paolozzi, L. and Patil, M. M. and Peri\'c, I. and Weber, M.},
title = {{Novel high-speed monolithic silicon detector for particle physics}},
doi = {10.1088/1748-0221/18/05/C05011},
journal = {JINST},
volume = {18},
number = {05},
pages = {C05011},
year = {2023}
}
@article{Termo_2024,
doi = {10.1088/1748-0221/19/03/C03039},
url = {https://dx.doi.org/10.1088/1748-0221/19/03/C03039},
year = {2024},
month = {mar},
publisher = {IOP Publishing},
volume = {19},
number = {03},
pages = {C03039},
author = {Termo, Gennaro and Borghello, Giulio and Faccio, Federico and Kloukinas, Kostas and Caselle, Michele and Elsenhans, Alexander Friedrich and Ulusoy, Ahmet Cagri and Koukab, Adil and Sallese, Jean-Michel},
title = {Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator},
journal = {Journal of Instrumentation},
abstract = {The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO2) with different back-gate bias configurations, from -8 V to 2 V. The investigation revealed that the performance is significantly affected by TID, with the radiation response being dominated by the charge trapped in the buried oxide.}
}
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